Optical Devices, Optical Modules, and High Frequency Devices
High power GaN HEMT (discrete)
TypeNo. | Availability Status | Po (dBm) | Linear Power Gain (dB) | Power Added Efficiency (%) | Frequency (GHz) | Drain- | Drain Current (A) | Inverter cir thermal resistance | S-parameter | Remarks |
MGF0840G | DVLP | 39.0(min) 40.0(typ) | 13.0(min) 14.0(typ) | 55.0 | 2.6 | 47.0 | 0.09 | 6.8(typ) 9.7(max) | mgf0840g.s2p | G |
MGF0843G | DVLP | 42.0(min) 43.0(typ) | 12.0(min) 13.0(typ) | 55.0 | 2.6 | 47.0 | 0.17 | 3.9(typ) 5.3(max) | mgf0843g.s2p | G |
MGF0846G | DVLP | 45.0(min) 46.0(typ) | 11.0(min) 12.0(typ) | 55.0 | 2.6 | 47.0 | 0.34 | 2.5(typ) 3.2(max) | mgf0846g.s2p | G |
★ : New products ★★: Under development MP: Massproduction products ×: Stop production PO: E.O.L
Industrial Grade
MGF0840G,MGF0843G,MGF0846G
Ta=25°C
GaAs high-frequency devices
Type | Semiconductor list |
Low noise GaAs FET | |
Low noise GaAs HEMT | |
High power GaAs FET(Discrete) | |
L/S band internal matching type high power GaAs FET | |
C band internal matching type high power GaAs FET | |
X/Ku band internal matching type high power GaAs FET | |
Using a hybrid GaAs IC mobile phone | |
GaAs amplifiers for wireless communication | GaAs amplifiers for wireless communication |
Using ahybrid GaAs IC mobile phone
PDF update | TypeNo. | DataSheet | Availability Status | fL(MHz) | fH(MHz) | Po(dBm) | VD(V) | VG(V) | Eff(%) | Pin(dBm) | S-parameter | RemarksRemarksRemarks |
─ | BA012F1 | ─ | NEW | 1920 | 1980 | 28.25 | 3.4 | ─ | 45 | ─ | ─ | 3mm x 3mm with coupler, 1bit gain control function |
─ | BA012F2 | ─ | NEW | 1850 | 1910 | 28.25 | 3.4 | ─ | 45 | ─ | ─ | 3mm x 3mm with coupler, 1bit gain control function |
─ | BA012F3 | ─ | NEW | 1710 | 1785 | 28.25 | 3.4 | ─ | 45 | ─ | ─ | 3mm x 3mm with coupler, 1bit gain control function |
─ | BA012F5 | ─ | NEW | 824 | 849 | 28.25 | 3.4 | ─ | 45 | ─ | ─ | 3mm x 3mm with coupler, 1bit gain control function |
─ | BA012F8 | ─ | NEW | 880 | 915 | 28.25 | 3.4 | ─ | 45 | ─ | ─ | 3mm x 3mm with coupler, 1bit gain control function |
★: New products ★★:Under development MP: Mass productionproducts ×: Stop production PO: E.O.L
High frequency silicon devices
Type | Semiconductor list |
VHF 50-300MHz/ small power output | |
VHF 50-300MHz/ high power output | |
UHF 300-500MHz/ small power output | |
UHF 300-500MHz/ high power output | |
800MHz band | |
1.2GHz band | |
HF,VHF,UHF,900MHz |
Optical device products:
Laserdiode for optical fiber communication: TO package
Photoelectric diodeused in optical fiber communication: TO package
Laser diode for optical fiber communication: TOSA sub-assembly
Photoelectric diodeused in optical fiber communication:ROSA sub-assembly
Laser diode for optical fiber communication: Pigtail sub-assembly
Photoelectric diode used in optical fiber communication: Pigtailsub-assembly
Laser diode device: TO package FTTH
Laser diode device: TO package below2.5Gbps
Laser diode device: TO package 2.5Gbps
Laser diode device: 2.5Gbps TOSA sub-assembly
Laser diode device: 8GbpsTOSA sub-assembly
Laser diode device:10Gbps TOSA sub-assembly
Laser diode device: 40Gbps pigtail sub-assembly
Laser diode device: CATV, mobile communication pigtail sub-assembly
Photodiode: TO package FTTH
Photodiode: TOpackage below 2.5Gbps
Photodiode: TO package 2.5Gbps
Photodiode: TO package 10Gbps
Photodiode device: 2.5Gbps ROSA sub-assembly
Photodiode device: 10Gbps ROSA sub-assembly
Photodiode device: 10Gbps pigtail sub-assembly
Photodiode device: 40Gbps pigtail sub-assembly
DVD R/RW apply laser diode 658nm
Industry and display apply laser diode 638nm
Industry and display apply laser diode 808nm