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RF and OPT modules

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RF and OPT modules

Optical Devices, Optical Modules, and High Frequency Devices


High power GaN HEMT (discrete)

TypeNo.Availability
Status
Po
(dBm)
Linear Power 
Gain (dB)
Power Added 
Efficiency
(%)
Frequency 
(GHz)

Drain-
Source
Voltage(V)

Drain 
Current
(A)
Inverter cir
 thermal resistance
S-parameterRemarks
MGF0840GDVLP39.0(min)
40.0(typ)
13.0(min)
14.0(typ)
55.02.647.00.096.8(typ) 9.7(max)mgf0840g.s2pG
MGF0843GDVLP42.0(min)
43.0(typ)
12.0(min)
13.0(typ)
55.02.647.00.173.9(typ) 5.3(max)mgf0843g.s2pG
MGF0846GDVLP45.0(min)
46.0(typ)
11.0(min)
12.0(typ)
55.02.647.00.342.5(typ) 3.2(max)mgf0846g.s2pG

★  : New products ★★: Under development  MP: Massproduction products  ×: Stop production  PO: E.O.L


Industrial Grade
MGF0840G,MGF0843G,MGF0846G

Ta=25°C

GaAs high-frequency devices


Type

Semiconductor list

Low noise GaAs FET

Low noise GaAs FET

Low noise GaAs HEMT

Low noise GaAs HEMT

High power GaAs FET(Discrete)

High power GaAs FET(Discrete)

L/S band internal matching type high power GaAs FET

L/S band internal matching type high power GaAs FET

C band internal matching type high power GaAs FET

C band internal matching type high power GaAs FET

X/Ku band internal matching type high power GaAs FET

X/Ku band internal matching type high power GaAs FET

Using a hybrid GaAs IC mobile phone

Using a hybrid GaAs IC mobile phone

GaAs amplifiers for wireless communication

GaAs amplifiers for wireless communication

Using ahybrid GaAs IC mobile phone

PDF update

TypeNo.

DataSheet

Availability Status

fL(MHz)

fH(MHz)

Po(dBm)

VD(V)

VG(V)

Eff(%)

Pin(dBm)

S-parameter

RemarksRemarksRemarks

BA012F1

NEW

1920

1980

28.25

3.4

45

3mm x 3mm with coupler, 1bit gain control function

BA012F2

NEW

1850

1910

28.25

3.4

45

3mm x 3mm with coupler, 1bit gain control function

BA012F3

NEW

1710

1785

28.25

3.4

45

3mm x 3mm with coupler, 1bit gain control function

BA012F5

NEW

824

849

28.25

3.4

45

3mm x 3mm with coupler, 1bit gain control function

BA012F8

NEW

880

915

28.25

3.4

45

3mm x 3mm with coupler, 1bit gain control function

★: New products ★★:Under development  MP: Mass productionproducts  ×: Stop production  PO: E.O.L

 

High frequency silicon devices

Type

Semiconductor list

VHF 50-300MHz/ small power output

VHF 50-300MHz/ small power output   

VHF 50-300MHz/ high power output

VHF 50-300MHz/ high power output

UHF 300-500MHz/ small power output

UHF 300-500MHz/ small power output

UHF 300-500MHz/ high power output

UHF 300-500MHz/ high power output

800MHz band

800MHz band

1.2GHz band

1.2GHz band

HF,VHF,UHF,900MHz

HF,VHF,UHF,900MHz

 

Optical device products:

Laserdiode for optical fiber communication: TO package

Photoelectric diodeused in optical fiber communication: TO package

Laser diode for optical fiber communication: TOSA sub-assembly

Photoelectric diodeused in optical fiber communication:ROSA sub-assembly

Laser diode for optical fiber communication: Pigtail sub-assembly

Photoelectric diode used in optical fiber communication: Pigtailsub-assembly

Laser diode device: TO package FTTH

Laser diode device: TO package below2.5Gbps

Laser diode device: TO package 2.5Gbps

Laser diode device: 2.5Gbps TOSA sub-assembly

Laser diode device: 8GbpsTOSA sub-assembly

Laser diode device:10Gbps TOSA sub-assembly

 

Laser diode device: 40Gbps pigtail sub-assembly

Laser diode device: CATV, mobile communication pigtail sub-assembly

Photodiode: TO package FTTH

Photodiode: TOpackage below 2.5Gbps

Photodiode: TO package 2.5Gbps  

Photodiode: TO package 10Gbps

Photodiode device: 2.5Gbps ROSA sub-assembly 

Photodiode device: 10Gbps ROSA sub-assembly

Photodiode device: 10Gbps pigtail sub-assembly

Photodiode device: 40Gbps pigtail sub-assembly  

DVD R/RW apply laser diode 658nm

Industry and display apply laser diode 638nm

Industry and display apply laser diode 808nm



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